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| FDJ1032C Complementary PowerTrench(R) MOSFET F June 2008 FDJ1032C Complementary PowerTrench(R) MOSFET Features Q1 -2.8 A, -20 V. RDS(ON) = 160 m @ VGS = -4.5 V RDS(ON) = 230 m @ VGS = -2.5 V RDS(ON) = 390 m @ VGS = -1.8 V RDS(ON) = 90 m @ VGS = 4.5 V RDS(ON) = 130 m @ VGS = 2.5 V General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Q2 3.2 A, 20 V. Low gate charge High performance trench technology for extremely low RDS(ON) FLMP SC75 package: Enhanced thermal performance in industry-standard package size RoHS Compliant Applications DC/DC converter Load switch Motor Driving S2 S1 G1 5 6 4 Bottom Drain Contact 3 Q2 (N) 2 1 Q1 (P) Bottom Drain Contact S1 S2 G2 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RJA RJC Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Q1 -20 8 -2.8 -12 1.5 0.9 -55 to +150 Q2 20 12 3.2 12 Units V V A W C C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1a) 80 5 (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDJ1032C Rev. B2(W) FDJ1032C Complementary PowerTrench(R) MOSFET Package Marking and Ordering Information Device Marking .H Device FDJ1032C Reel Size 7" Tape width 8mm Quantity 3000 units Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A VGS = 0 V, ID = 250 A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 -20 20 -13 13 -1 1 100 100 V mV/C A nA Parameter Test Conditions Type Min Typ Max Units Breakdown Voltage Temperature ID = -250 A, Referenced to 25C Coefficient ID = 250 A, Referenced to 25C Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V VDS = 16 V, VGS = 0 V Gate-Body Leakage VGS = 8 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = -250 A VDS = VGS, ID = 250 A ID = -250 A, Referenced to 25C ID = 250 A, Referenced to 25C VGS = -4.5 V, ID = -2.8 A VGS = -2.5 V, ID = -2.2 A VGS = -1.8 V, ID = -1.7 A VGS = -4.5 V, ID =2.8A, TJ = 125C VGS = 4.5 V, ID = 3.2 A VGS = 2.5 V, ID = 2.7 A VGS = 4.5 V, ID = 3.2, TJ = 125C On Characteristics (Note 2) VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 Q2 Q1 Q2 Q1 -0.4 0.6 -0.8 1.0 3 -3 108 163 283 150 70 100 83 5 7.5 160 230 390 238 90 130 132 S -1.5 1.5 V mV/C m Q2 gFS Forward Transconductance VDS = -5 V, ID = - 2.8 A VDS = 5 V, ID = 3.2 A Q1: VDS = -10 V, VGS = 0 V, f = 1.0 MHz Q2: VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 290 200 55 50 29 30 14 3 8 7 13 8 13 11 18 2 16 14 23 16 23 20 32 4 pF pF pF VGS = Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Q1: VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Q2: VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 ns ns ns ns 2 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Electrical Characteristics (Continued) Symbol Qg Qgs Qgd Parameter Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Q1: VDS = -10 V, ID = -2.8 A, VGS= -4.5V Q2: VDS = 10 V, ID = 3.2 A, VGS = 4.5 V Type Q1 Q2 Q1 Q2 Q1 Q2 Min Typ 3 2 0.65 0.4 0.75 1.0 Max Units 4 3 nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -1.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) IF = -4.2A, dIF/dt = 100 A/s IF = 5.9A, dIF/dt = 100 A/s IF = -4.2A, dIF/dt = 100 A/s IF = 5.9A, dIF/dt = 100 A/s Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 -0.8 0.8 14 11 4 2.5 -1.25 1.25 -1.2 1.2 A V nS nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 80C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q1 10 VGS=-4.5V 8 -2.5V 6 -3.5V 2.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V 2.4 V GS=-1.8V 2.2 2 -2.0V 1.8 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V -ID, DRAIN CURRENT (A) 4 -2.0V -1.8V 2 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 RDS(ON) , ON-RESISTANCE (OHM) 1.4 I D = -2.8A VGS = -4.5V I D = -1.4A 0.44 0.38 0.32 TA = 125C 0.26 0.2 0.14 TA = 25C 0.08 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (C) -VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 T A = -55C 25 C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS=0V 10 -ID , DRAIN CURRENT (A) 4 125 C 3 1 TA = 125C 0.1 25C 0.01 -55C 0.001 0.0001 2 1 0 0.5 1 1.5 2 2.5 -VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q1 5 500 ID = -2.8A 4 VDS = -5V -15V 3 -10V 400 f = 1 MHz VGS = 0 V CISS 300 -V GS, GATE-SOURCE VOLTAGE (V) 2 CAPACITANCE (pF) 200 COSS 100 CRSS 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 100 s RDS(ON) LIMIT 10ms 1s DC VGS = -4.5V SINGLE PULSE RJA = 140 o C/W T A = 25 oC 10s 1ms 100ms 8 SINGLE PULSE RJA = 140C/W T A = 25C 6 1 4 0.1 2 0.01 0.1 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 5 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q2 12 VGS = 4.5V 10 3.5V 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 2 VGS = 2.5V 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 12 I D, DRAIN CURRENT (A) 3.0V 3.5V 4.0V 4.5V I D, DRAIN CURRENT (A) 8 2.5V 6 4 2.0V 2 0 0 0.5 1 1.5 2 2.5 3 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.28 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 I D = 3.2A VGS = 4.5V R DS(ON) , ON-RESISTANCE (OHM) I D = 1.6A 0.24 0.2 0.16 T A = 125C 0.12 0.08 T A = 25C -25 0 25 50 75 100 125 150 0.04 1 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 13. On-Resistance Variation with Temperature. 10 25C 10 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. I S, REVERSE DRAIN CURRENT (A) V DS = 5V VGS = 0V TA = -55 C 1 TA = 125C 0.1 25C 0.01 -55C 0.001 I D , DRAIN CURRENT (A) 8 125C 6 4 2 0 1 1.5 2 2.5 3 3.5 VGS , GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 6 FDJ1032C Rev. B2(W) www.fairchildsemi.com .ngised draob tiucric eht no gnidneped egnahc lliw esnopser lamreht tneisnarT b1 etoN ni debircsed snoitidnoc eht gnisu demrofrep noitaziretcarahc lamrehT . .e vruC esnopseR lamrehT tneisnarT .12 erugiF ) ces 0001 001 01 1 ( EM T , I 1 t 1.0 10.0 100.0 ESLUP ELGNIS 10.0 20.0 50.0 1.0 2.0 2 t/1 t )t( AJ = D ,elcyC ytuD R * P = AT - JT 2t 1t )kp( 1.0 P I N AJ 1 . ita issi re i no p D woP m m x M l P lgn S 02 u i a es u e . eru giF 100.0 0 .aer A gn itare pO efaS mumixaM .91 erugiF NI ) 0001 001 01 ces ( EM T , I 1 t )V( EGATLOV ECRUOS- ARD ,SD V 1.0 10.0 001 01 1 1.0 10.0 1 2 4 s01 N I 6 8 N s m01 sm001 s1 1 s m1 s001 TIMIL )NO(SDR C52 = AT W/C041 = AJ R ESLUP ELGNIS 01 )W( REWOP T E S ART KAEP ,)kp(P 001 .scitsiretcarah Cn ec atica paC .81 erugiF 5 0 5.2 .scitsiretcarah Cg e rah C 1 eta G .71 eru giF 0 )V( EGATLOV ECRUOS OT ARD ,SDV NI 02 51 01 SSR C )Cn( EGRAHC ETAG ,gQ 0 05 2 5.1 5.0 0 1 2 SSO C 001 051 002 N I ) Fp ( E C AT C A P A C V51 V01 V5 = SD V A2.3 = DI 3 4 5 V 0 = SG V zHM1 = f 003 FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q2 )V( EGATLOV ECRUOS-ETAG ,SGV SSI C 052 )A( T ERRUC ARD ,D N NI CD Co 52 = AT W/C 041 = AJ R o ESLUP ELGNIS V5.4 = SGV 1.0 01 I EC ATS SER LAMREHT T E S ART EV TCEFFE DEZ LAMRO ,) ( N I N I I N W/ C 041 = AJ R R * )t(r = )t(AJ R 5.0 = D tr FDJ1032C Rev. B2(W) 7 1000.0 10.0 www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Dimensional Outline and Pad Layout DRAIN 1 PKG C L 3 (0.24) (0.18) 0.30 0.20 PKG C L (0.46) DRAIN 1 6 4 (0.73) (0.50) DRAIN 2 PKG C L 0.30 MIN DRAIN 1 TERMINAL 0.20 0.84 PKG C L 0.60 0.50 MIN 2.35 MIN 1.35 6 4 Bottom View 1.70 1.50 PKG C L 6 4 A B PKG C L 1.75 1.55 1 3 0.50 1.00 1 3 DRAIN 2 TERMINAL (0.20) 0.50 1.00 0.275 0.125 0.075 M A B Recommended Landing Pattern Notes: Unless otherwise specified all dimensions are in millimeters. Top View PKG C L 0.80 0.65 0.225 0.075 PKG C L SEATING PLANE PKG 1.075 0.925 2.15 1.85 8 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production 9 FDJ1032C Rev. B2(W) www.fairchildsemi.com |
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